Korol, AnatoliyKitsai, M. Ye.Strikha, V.Sheka, D.2013-09-272013-09-271975Effect of deep impurity levels on Schottky barrier diode characteristics / A. Korol, M. Kitsai, V. Strikha, D. Sheka // Solid State Electronics. – 1975. – Vol. 18. – P. 375.https://dspace.nuft.edu.ua/handle/123456789/9962In the presence of an arbitrary number of deep donor levels volt-ampere and volt-farad characteristics are obtained for the Schottky barrier diode which contains a thin dielectric layer between the metal and the semiconductor.otherdeep levelsSchottky barrierбар’єр Шоткіглибокі рівнібарьер Шотткиглубокие уровникафедра фізикиArticle