Korol, AnatoliyTretyak, O.Sheka, D.2013-04-292013-04-292001Korol, A. The effect of both abrupt and strong enhancement of current in the semiconductor system : Schottky barrier containing a double barrier resonant-tunneling structure / A. Korol, O. Tretyak, D. Sheka // Physica Status Solidi (a) 188. – 2001. - № 3. – P. 1169-1175.https://dspace.nuft.edu.ua/handle/123456789/7711The current-voltage characteristics for the double barrier resonant-tunneling structure incorporated into the depletion region of a Schottky barrier, are evaluated and analyzed. Hence both a very sharp and strong enhancement of current through the structure considered takes place for forward bias.othercurrent-voltage characteristicresonant-tunneling structureschottky barrierвольт-амперна характеристикатунельно-резонансна структурабар’єр Шотківольт-амперная характеристикатуннельно-резонансная структурабарьер Шотткикафедра фізики та професійної безпекиOther