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Документ The effect of both abrupt and strong enhancement of current in the semiconductor system : Schottky barrier containing a double barrier resonant-tunneling structure(2001) Korol, Anatoliy; Tretyak, O.; Sheka, D.The current-voltage characteristics for the double barrier resonant-tunneling structure incorporated into the depletion region of a Schottky barrier, are evaluated and analyzed. Hence both a very sharp and strong enhancement of current through the structure considered takes place for forward bias.