The effect of both abrupt and strong enhancement of current in the semiconductor system : Schottky barrier containing a double barrier resonant-tunneling structure
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The current-voltage characteristics for the double barrier resonant-tunneling structure incorporated into the depletion region of a Schottky barrier, are evaluated and analyzed. Hence both a very sharp and strong enhancement of current through the structure considered takes place for forward bias.
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Korol, A. The effect of both abrupt and strong enhancement of current in the semiconductor system : Schottky barrier containing a double barrier resonant-tunneling structure / A. Korol, O. Tretyak, D. Sheka // Physica Status Solidi (a) 188. – 2001. - № 3. – P. 1169-1175.