Effect of deep impurity levels on Schottky barrier diode characteristics
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Abstract
In the presence of an arbitrary number of deep donor levels volt-ampere and volt-farad characteristics are obtained for the Schottky barrier diode which contains a thin dielectric layer between the metal and the semiconductor.
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Effect of deep impurity levels on Schottky barrier diode characteristics / A. Korol, M. Kitsai, V. Strikha, D. Sheka // Solid State Electronics. – 1975. – Vol. 18. – P. 375.