The effect of both abrupt and strong enhancement of current in the semiconductor system : Schottky barrier containing a double barrier resonant-tunneling structure
dc.contributor.author | Korol, Anatoliy | |
dc.contributor.author | Tretyak, O. | |
dc.contributor.author | Sheka, D. | |
dc.date.accessioned | 2013-04-29T10:19:00Z | |
dc.date.available | 2013-04-29T10:19:00Z | |
dc.date.issued | 2001 | |
dc.description.abstract | The current-voltage characteristics for the double barrier resonant-tunneling structure incorporated into the depletion region of a Schottky barrier, are evaluated and analyzed. Hence both a very sharp and strong enhancement of current through the structure considered takes place for forward bias. | uk_UK |
dc.identifier.citation | Korol, A. The effect of both abrupt and strong enhancement of current in the semiconductor system : Schottky barrier containing a double barrier resonant-tunneling structure / A. Korol, O. Tretyak, D. Sheka // Physica Status Solidi (a) 188. – 2001. - № 3. – P. 1169-1175. | uk_UK |
dc.identifier.uri | https://dspace.nuft.edu.ua/handle/123456789/7711 | |
dc.language.iso | other | uk_UK |
dc.subject | current-voltage characteristic | uk_UK |
dc.subject | resonant-tunneling structure | uk_UK |
dc.subject | schottky barrier | uk_UK |
dc.subject | вольт-амперна характеристика | uk_UK |
dc.subject | тунельно-резонансна структура | uk_UK |
dc.subject | бар’єр Шоткі | uk_UK |
dc.subject | вольт-амперная характеристика | uk_UK |
dc.subject | туннельно-резонансная структура | uk_UK |
dc.subject | барьер Шоттки | uk_UK |
dc.subject | кафедра фізики та професійної безпеки | |
dc.title | The effect of both abrupt and strong enhancement of current in the semiconductor system : Schottky barrier containing a double barrier resonant-tunneling structure | uk_UK |
dc.type | Other | uk_UK |
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