(1975) Korol, Anatoliy; Kitsai, M. Ye.; Strikha, V.; Sheka, D.
In the presence of an arbitrary number of deep donor levels volt-ampere and volt-farad characteristics are obtained for the Schottky barrier diode which contains a thin dielectric layer between the metal and the semiconductor.
The heterostructure in which a quantum well is formed in the depletion region of the Schottky barrer is considered. The forward current – voltage characteristic of this structure is evaluated and analyzed.
