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Effect of deep impurity levels on Schottky barrier diode characteristics
(1975) Korol, Anatoliy; Kitsai, M. Ye.; Strikha, V.; Sheka, D.
In the presence of an arbitrary number of deep donor levels volt-ampere and volt-farad characteristics are obtained for the Schottky barrier diode which contains a thin dielectric layer between the metal and the semiconductor.
The effect of both abrupt and strong enhancement of current in the semiconductor system : Schottky barrier containing a double barrier resonant-tunneling structure
(2001) Korol, Anatoliy; Tretyak, O.; Sheka, D.
The current-voltage characteristics for the double barrier resonant-tunneling structure incorporated into the depletion region of a Schottky barrier, are evaluated and analyzed. Hence both a very sharp and strong enhancement of current through the structure considered takes place for forward bias.
The sharply nonlinear current – voltage characteristic of a structure with a quantum well built in the depletion region of a Schottky barrier
(2012) Korol, Anatoliy; Nosenko, I.
The heterostructure in which a quantum well is formed in the depletion region of the Schottky barrer is considered. The forward current – voltage characteristic of this structure is evaluated and analyzed.