(1975) Korol, Anatoliy; Kitsai, M. Ye.; Strikha, V.; Sheka, D.
In the presence of an arbitrary number of deep donor levels volt-ampere and volt-farad characteristics are obtained for the Schottky barrier diode which contains a thin dielectric layer between the metal and the semiconductor.
The current-voltage characteristics for the double barrier resonant-tunneling structure incorporated into the depletion region of a Schottky barrier, are evaluated and analyzed. Hence both a very sharp and strong enhancement of current through the structure considered takes place for forward bias.
