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Effect of deep impurity levels on Schottky barrier diode characteristics
(1975) Korol, Anatoliy; Kitsai, M. Ye.; Strikha, V.; Sheka, D.
In the presence of an arbitrary number of deep donor levels volt-ampere and volt-farad characteristics are obtained for the Schottky barrier diode which contains a thin dielectric layer between the metal and the semiconductor.
The effect of both abrupt and strong enhancement of current in the semiconductor system : Schottky barrier containing a double barrier resonant-tunneling structure
(2001) Korol, Anatoliy; Tretyak, O.; Sheka, D.
The current-voltage characteristics for the double barrier resonant-tunneling structure incorporated into the depletion region of a Schottky barrier, are evaluated and analyzed. Hence both a very sharp and strong enhancement of current through the structure considered takes place for forward bias.
Dielectric permittivity of semiconductors with narrow forbidden gap in the long-wave limit
(1976) Sheka, D.; Korol, Anatoliy; Шека, Д. І.; Король, Анатолій Миколайович
In the random phase approximation the dielectric permittivity is evaluated for a semiconductor with a band structure described by Kane’s energy band scheme. It is demonstrated that the fact that several hole bands have been taken into account, when the operator of the kinetic energy ceased to be the Dirac one plays the principal role in the calculation of the static dielectric permittivity ε(q →0).